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博客|Blog:MODELLING ELECTRICAL PROPERTIES OF THIN HIGH-K GATE STACKS

This project focus on researching the electrical properties of HfSiO (with 50% doping density), which is a high-k stack produced by MOCVD (the method of metal organic vapour chemical deposition). The final product is the different parameters that were calculated from the experimental CV curve, including k value, equivalent oxide thickness (EOT), mid gap voltage, mid gap capacitance, flat band voltage, flat band capacitance, fixed oxide charge.

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